Polar wurtzite nitride semiconductors, such as aluminum nitride (AlN) and gallium nitride (GaN), are central to modern high-power and high-frequency electronic devices because of their wide band gaps, high breakdown electric fields, and strong spontaneous and piezoelectric polarization.
Source: [Phys.org](https://phys.org/news/2026-09-nitride-semiconductor-material-options-powerful.html)